Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Linear Integrated Systems
SD-SST210/214
N-CHANNEL LATERAL
DMOS SWITCH
Product Summary
Features
Benefits
Applications
Ultra-High Speed Switching--
tON
: 1 ns
High-Speed System Performance
Fast Analog Switch
Ultra-Low Reverse Capacitance: 0.2 pF
Low Insertion Loss at High Frequencies
Fast Sample-and-Holds
Low Guaranteed
rDS
@5 V
Low Transfer Signal Loss
Pixel-Rate Switching
Low Turn-On Threshold Voltage
Simple Driver Requirement
DAC Deglitchers
N-Channel Enhancement Mode
Single Supply Operation
High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for 10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and
voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array--SD5000/5400 series, and
Zener protected--SD211DE/SST211 series.
Absolute Maximum Ratings (T
A
= 25
0
C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage .........................................................
40 V
Gate-Substrate Voltage .........................................................................
30 V
Drain-Source Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
Source-Drain Voltage
(SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
Drain-Substrate Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
Source-Substrate Voltage
(SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 300
0
C
Storage Temperature .................................................................... -65 to 150
0
C
Operating Junction Temperature ................................................. -55 to 125
0
C
Power Dissipation
a ....................................................................................................................................
300 mW
Notes:
a. Derate 3 mW/
0
C above 25
0
C
Part Number
V(BR)DS Min(V)
VGS(th) Max (V)
SD210DE
SD214DE
SST210
SST214
30
20
30
20
1.5
1.5
1.5
1.5
rDS(on) Max()
Crss Max (pF)
45 @ VGS = 10V
45 @ VGS = 10V
50 @ VGS = 10V
50 @ VGS = 10V
tON Max (ns)
0.5
2
0.5
2
0.5
2
0.5
2
Top View
SST210 SST214
Top View
SD210DE SD214DE
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Specifications
a
Notes:
a. T
A
= 25
0
C unless otherwise noted.
b. B is the body (substrate) and V
(BR)
is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
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